| 27/Mar/2020 | 85419000 | F904 # & Semiconductor base withstand high voltage in antenna pan-SGN36H080M1K-HIGH ELECTRON MOBILITY TRANSISTOR. Switching power: 16W # & VN | Japan | pcs/piece | 500.00 | 4,235.00 | 8.47 | View Importer | View Supplier |
| 26/Mar/2020 | 85419000 | F648 # & Semiconductor substrate withstand high voltage (in antenna pan) egnc105mk / liver high electron mobility transistor. Switching power: 20W # & VN | Japan | pcs/piece | 383.00 | 2,906.97 | 7.59 | View Importer | View Supplier |
| 26/Mar/2020 | 85419000 | F904 # & Semiconductor base withstand high voltage in antenna pan-SGN36H080M1K-HIGH ELECTRON MOBILITY TRANSISTOR. Switching power: 16W # & VN | Japan | pcs/piece | 1,000.00 | 8,470.00 | 8.47 | View Importer | View Supplier |
| 26/Mar/2020 | 85412900 | 111026052X # & Digital Tranzito semiconductor components, P-channel switching (PNP) in solder paste, power consumption 150mW, maximum voltage of 50VDC # & PH | Japan | pcs/piece | 70.00 | 1.40 | 0.02 | View Importer | View Supplier |
| 25/Mar/2020 | 85419000 | F648 # & Semiconductor substrate withstand high voltage (in antenna pan) egnc105mk / liver high electron mobility transistor. Switching power: 20W # & VN | Japan | pcs/piece | 332.00 | 2,519.88 | 7.59 | View Importer | View Supplier |
| 25/Mar/2020 | 85419000 | F648 # & Semiconductor substrate withstand high voltage (in antenna pan) egnc105mk / liver high electron mobility transistor. Switching power: 20W # & VN | Japan | pcs/piece | 325.00 | 2,466.75 | 7.59 | View Importer | View Supplier |
| 25/Mar/2020 | 85419000 | P0275 # & Semiconductor base (in antenna pan) FSX017LG / High Electron Mobility Transistor (HEMT). Switching power: 11W # & VN | Japan | pcs/piece | 2,199.00 | 1,825.17 | 0.83 | View Importer | View Supplier |
| 25/Mar/2020 | 85419000 | SG0352 # & Semiconductor Soles withstand high voltage (in antenna pan) -SGN21C105MK / GaN High Electron Mobility Transistor. Switching power: 16W # & VN | Japan | pcs/piece | 294.00 | 2,422.56 | 8.24 | View Importer | View Supplier |
| 25/Mar/2020 | 85419000 | F904 # & Semiconductor base withstand high voltage in antenna pan-SGN36H080M1K-HIGH ELECTRON MOBILITY TRANSISTOR. Switching power: 16W # & VN | Japan | pcs/piece | 500.00 | 4,235.00 | 8.47 | View Importer | View Supplier |
| 24/Mar/2020 | 85415000 | S0062 # & semiconductor devices in the phone exchange flu17xmt / gaas fet (field effect transistor). Switching power: 12.5W # & VN | Japan | pcs/piece | 1,000.00 | 3,100.00 | 3.10 | View Importer | View Supplier |
| 24/Mar/2020 | 85419000 | U0020 # & Semiconductor Base (in antenna pan) FHX36LP / High Electron Mobility Transistor (HEMT). Switching power: 10W # & VN | Japan | pcs/piece | 2,500.00 | 1,700.00 | 0.68 | View Importer | View Supplier |
| 24/Mar/2020 | 85419000 | D0693 # & Semiconductor base withstand high voltage in antenna pan - SGN21C050MK / GaN High Electron Mobility Transistor. Switching power: 17.5W # & VN | Japan | pcs/piece | 194.00 | 1,482.16 | 7.64 | View Importer | View Supplier |
| 24/Mar/2020 | 85419000 | F895 # & Semiconductor Soles withstand high voltage (in antenna pan) -SGN26H080M1H / GaN High Electron Mobility Transistor. Switching power: 17.5W # & VN | Japan | pcs/piece | 33.00 | 177.87 | 5.39 | View Importer | View Supplier |
| 24/Mar/2020 | 85419000 | F896 # & Semiconductor Soles withstand high voltage (in antenna pan) -SGN26H120M1H / GaN High Electron Mobility Transistor. Switching power: 17W # & VN | Japan | pcs/piece | 15.00 | 80.10 | 5.34 | View Importer | View Supplier |
| 24/Mar/2020 | 85419000 | F897 # & Semiconductor substrate withstand high voltage (in antenna pan) -SGN36H050M1H / GaN High Electron Mobility Transistor. Switching power: 17W # & VN | Japan | pcs/piece | 155.00 | 768.80 | 4.96 | View Importer | View Supplier |
