31/Mar/2020 | 85419000 | 550557 # & Detectors # & VN | Japan | pcs/piece | 1.00 | 615.60 | 615.60 | View Importer | View Supplier |
30/Mar/2020 | 85419000 | TGR-2217ST-00 # & Reflective base for LED & VN light-emitting diode application | Japan | pcs/piece | 2,400.00 | 12,312.00 | 5.13 | View Importer | View Supplier |
30/Mar/2020 | 85419000 | TGR-2217ST-03 # & Reflective base for LED & VN light-emitting diode application | Japan | pcs/piece | 900.00 | 5,670.00 | 6.30 | View Importer | View Supplier |
30/Mar/2020 | 85419000 | 550685 # & lattice # & VN | Japan | pcs/piece | 1.00 | 2,003.76 | 2,003.76 | View Importer | View Supplier |
30/Mar/2020 | 85419000 | 550686 # & lattice # & VN | Japan | pcs/piece | 1.00 | 2,003.76 | 2,003.76 | View Importer | View Supplier |
30/Mar/2020 | 85419000 | 550687 # & lattice # & VN | Japan | pcs/piece | 1.00 | 2,003.76 | 2,003.76 | View Importer | View Supplier |
30/Mar/2020 | 85419000 | 550688 # & lattice # & VN | Japan | pcs/piece | 1.00 | 2,003.76 | 2,003.76 | View Importer | View Supplier |
30/Mar/2020 | 85419000 | 550904 # & lattice # & VN | Japan | pcs/piece | 1.00 | 1,501.20 | 1,501.20 | View Importer | View Supplier |
28/Mar/2020 | 85419000 | 550684 # & Net # & VN detector | Japan | pcs/piece | 1.00 | 2,003.76 | 2,003.76 | View Importer | View Supplier |
28/Mar/2020 | 85419000 | 550903 # & Detectors # & VN | Japan | pcs/piece | 1.00 | 1,501.20 | 1,501.20 | View Importer | View Supplier |
27/Mar/2020 | 85419000 | F904 # & Semiconductor base withstand high voltage in antenna pan-SGN36H080M1K-HIGH ELECTRON MOBILITY TRANSISTOR. Switching power: 16W # & VN | Japan | pcs/piece | 500.00 | 4,235.00 | 8.47 | View Importer | View Supplier |
26/Mar/2020 | 85419000 | Wafer # & Chip MMW00200VI. New 100%. Return to item 42 of declaration 103122995730 E11 January 30, 2020 # & JP | Japan | pcs/piece | 67,218.00 | 6,721.80 | 0.10 | View Importer | View Supplier |
26/Mar/2020 | 85419000 | F648 # & Semiconductor substrate withstand high voltage (in antenna pan) egnc105mk / liver high electron mobility transistor. Switching power: 20W # & VN | Japan | pcs/piece | 383.00 | 2,906.97 | 7.59 | View Importer | View Supplier |
26/Mar/2020 | 85419000 | F904 # & Semiconductor base withstand high voltage in antenna pan-SGN36H080M1K-HIGH ELECTRON MOBILITY TRANSISTOR. Switching power: 16W # & VN | Japan | pcs/piece | 1,000.00 | 8,470.00 | 8.47 | View Importer | View Supplier |
26/Mar/2020 | 85419000 | 548906 # & Detector # & VN | Japan | pcs/piece | 1.00 | 5,832.00 | 5,832.00 | View Importer | View Supplier |