| 30/Mar/2020 | 09024090 | DRIED TEA TAM THAT / TEA 500G SIEU THI THI NHAN THIAN NHAN ADD: GAN CHUA LINH UNG, DOI 12, XA TA THANH OAI, HA NOI # & VN | Australia | pcs/piece | 4.00 | 0.80 | 0.20 | View Importer | View Supplier |
| 30/Mar/2020 | 39269099 | SP1017 # & DAY GAN 3.5MM # & VN | Vietnam | m | 11,040.00 | 304.70 | 0.03 | View Importer | View Supplier |
| 27/Mar/2020 | 16022000 | PATE GAN # & VN | Vietnam | pcs/piece | 12.00 | 18.00 | 1.50 | View Importer | View Supplier |
| 27/Mar/2020 | 16022000 | PATE GAN # & VN | Vietnam | package / box / bag / package | 12.00 | 18.00 | 1.50 | View Importer | View Supplier |
| 25/Mar/2020 | 85419000 | SG0352 # & Semiconductor Soles withstand high voltage (in antenna pan) -SGN21C105MK / GaN High Electron Mobility Transistor. Switching power: 16W # & VN | Japan | pcs/piece | 294.00 | 2,422.56 | 8.24 | View Importer | View Supplier |
| 24/Mar/2020 | 85419000 | D0693 # & Semiconductor base withstand high voltage in antenna pan - SGN21C050MK / GaN High Electron Mobility Transistor. Switching power: 17.5W # & VN | Japan | pcs/piece | 194.00 | 1,482.16 | 7.64 | View Importer | View Supplier |
| 24/Mar/2020 | 85419000 | F895 # & Semiconductor Soles withstand high voltage (in antenna pan) -SGN26H080M1H / GaN High Electron Mobility Transistor. Switching power: 17.5W # & VN | Japan | pcs/piece | 33.00 | 177.87 | 5.39 | View Importer | View Supplier |
| 24/Mar/2020 | 85419000 | F896 # & Semiconductor Soles withstand high voltage (in antenna pan) -SGN26H120M1H / GaN High Electron Mobility Transistor. Switching power: 17W # & VN | Japan | pcs/piece | 15.00 | 80.10 | 5.34 | View Importer | View Supplier |
| 24/Mar/2020 | 85419000 | F897 # & Semiconductor substrate withstand high voltage (in antenna pan) -SGN36H050M1H / GaN High Electron Mobility Transistor. Switching power: 17W # & VN | Japan | pcs/piece | 155.00 | 768.80 | 4.96 | View Importer | View Supplier |
| 23/Mar/2020 | 85419000 | D0693 # & Semiconductor base withstand high voltage in antenna pan - SGN21C050MK / GaN High Electron Mobility Transistor. Switching power: 17.5W # & VN | Japan | pcs/piece | 17.00 | 129.88 | 7.64 | View Importer | View Supplier |
| 23/Mar/2020 | 85419000 | D0693 # & Semiconductor base withstand high voltage in antenna pan - SGN21C050MK / GaN High Electron Mobility Transistor. Switching power: 17.5W # & VN | Japan | pcs/piece | 47.00 | 359.08 | 7.64 | View Importer | View Supplier |
| 23/Mar/2020 | 85419000 | SG0352 # & Semiconductor Soles withstand high voltage (in antenna pan) -SGN21C105MK / GaN High Electron Mobility Transistor. Switching power: 17.5W # & VN | Japan | pcs/piece | 7.00 | 61.04 | 8.72 | View Importer | View Supplier |
| 23/Mar/2020 | 85419000 | SG0352 # & Semiconductor Soles withstand high voltage (in antenna pan) -SGN21C105MK / GaN High Electron Mobility Transistor. Switching power: 17.5W # & VN | Japan | pcs/piece | 584.00 | 5,092.48 | 8.72 | View Importer | View Supplier |
| 23/Mar/2020 | 85419000 | SG0352 # & Semiconductor Soles withstand high voltage (in antenna pan) -SGN21C105MK / GaN High Electron Mobility Transistor. Switching power: 16W # & VN | Japan | pcs/piece | 75.00 | 618.00 | 8.24 | View Importer | View Supplier |
| 20/Mar/2020 | 73269099 | JAPANESE BASE GAN XILANH KICH MAY MONITOR # & VN | Vietnam | pcs/piece | 20.00 | 259.46 | 12.97 | View Importer | View Supplier |
